Headquartered in Shenzhen with 12+ years of industry experience, FR4PCB.TECH is a professional high-precision probe card manufacturer specializing in Wafer Test Probe Card, Packaging Probe Card, and Custom Semiconductor Test Solutions for global semiconductor, electronics, and chip manufacturing clients.
7-14 days standard delivery for custom probe cards, 48h emergency design review, rapid prototyping service available. AI-driven design optimization reduces time-to-market by 50% for semiconductor test projects.
±1μm positioning accuracy, 2μm probe tip precision, 0.01mm pitch capability, support for 2nm-90nm wafer testing, high-frequency signal integrity up to 67GHz for advanced semiconductor testing applications.
99.8% test accuracy rate, ISO 9001:2015 certified, full inspection with high-precision optical measurement, environmental testing (-40℃~+125℃), 100,000 insertion cycle durability testing.
One-stop services from probe card design, material selection, precision machining, assembly, calibration to after-sales maintenance. 24/7 engineering support with free design review.
Specialized in MEMS probe card, vertical probe card, membrane probe card, high-frequency probe card, supporting advanced packaging (Fan-out, TSV, Chiplet) testing requirements.
Serving 800+ global semiconductor clients with 80% repeat rate, NDA confidentiality agreements available, factory-direct pricing with flexible MOQ for small-batch custom probe cards.
We use only high-performance, certified materials from leading global manufacturers to ensure the highest reliability for semiconductor testing applications. Our material selection is optimized for precision, durability, and signal integrity in high-volume testing environments:
Grades: WCu 70/30, WCu 80/20, Pure Tungsten
Key Parameters:
• Hardness: 300-400 HV
• Electrical Conductivity: 20-45% IACS
• Thermal Conductivity: 180-220 W/m·K
• Wear Resistance: Excellent (100,000+ insertions)
Suppliers: Plansee (Austria), H.C. Starck (Germany), Xiamen Tungsten (China)
Applications: High-current testing, power device probe cards
Grades: PdCu 90/10, PdAg 80/20, PdNi
Key Parameters:
• Hardness: 200-250 HV
• Contact Resistance: <50mΩ
• Corrosion Resistance: Excellent
• Tip Sharpness: Down to 2μm radius
Suppliers: Umicore (Belgium), Tanaka Kikinzoku (Japan), Johnson Matthey (UK)
Applications: Fine pitch testing, advanced node wafer probing
Grades: NiTi 55/45, Superelastic Nitinol
Key Parameters:
• Elastic Strain: Up to 8%
• Recovery Rate: >99%
• Operating Temp: -40°C to +100°C
• Fatigue Life: 1,000,000+ cycles
Suppliers: Nitinol Devices & Components (US), Fort Wayne Metals (US), Johnson Matthey (UK)
Applications: MEMS probe cards, high-cycle testing applications
Types: Alumina (Al₂O₃), Aluminum Nitride (AlN), Silicon Carbide (SiC)
Key Parameters:
• Thermal Conductivity: 20-200 W/m·K
• Flatness: ±5μm over 100mm
• Dielectric Constant: 9.8-39.7
• Coefficient of Thermal Expansion: 4-7 ppm/°C
Suppliers: Kyocera (Japan), CoorsTek (US), NGK Insulators (Japan), Ferrotec (China)
Applications: High-temperature testing, high-power probe cards
Types: High Tg FR4, Rogers High-Frequency, PTFE
Key Parameters:
• Tg: 170-220°C
• Impedance Control: ±3Ω
• Signal Loss: <0.5dB/m @ 20GHz
• Layer Count: 2-20 layers
Suppliers: Rogers (US), Isola (US), Panasonic (Japan), Taconic (US), Shengyi (China)
Applications: High-frequency probe cards, RF testing applications
Types: Stainless Steel, Titanium Alloy, Invar
Key Parameters:
• Thermal Expansion: 0.5-17 ppm/°C
• Strength: 500-1200 MPa
• Corrosion Resistance: Excellent
• Machining Precision: ±1μm
Suppliers: Outokumpu (Finland), ATI (US), Nippon Steel (Japan), BaoSteel (China)
Applications: Probe card fixtures, precision mechanical components
Grades & Models:
• Standard FR4: Isola FR406 (Tg 130°C), Panasonic R-1515 (Tg 135°C)
• High Tg FR4: Isola FR408HR (Tg 170°C), Shengyi S1000-2 (Tg 175°C), Panasonic ME-678 (Tg 180°C)
• Ultra High Tg FR4: Isola Astra MT77 (Tg 200°C), Rogers RO4003 (Tg 220°C)
Key Parameters:
• Glass Transition Temp (Tg): 130-220°C
• Decomposition Temp (Td): 320-380°C
• Dielectric Constant (Dk): 4.2-4.7 @ 1GHz
• Thermal Conductivity: 0.3-0.8 W/m·K
• Peel Strength: >1.0 N/mm
• CTI: 600-800V
• Moisture Absorption: <0.2%
Suppliers: Isola Group (US), Panasonic Electronic Materials (Japan), Shengyi Technology (China), Kingboard (China), NanYa (Taiwan)
Applications: Standard probe card substrates, medium-frequency testing, cost-effective solutions
Types & Models:
• Rogers: RO4003C (Dk 3.38), RO4350B (Dk 3.48), RO4835 (Dk 3.48), RO5880 (Dk 2.2)
• Taconic: TLY-5 (Dk 2.2), RF-35 (Dk 3.5), TLX-8 (Dk 2.55), TSM-DS3 (Dk 3.0)
• Arlon: AD255C (Dk 2.55), DiClad 880 (Dk 2.2), CuClad 217 (Dk 2.17)
• Panasonic: Megtron 6 (Dk 3.35), Megtron 7 (Dk 3.2)
Key Parameters:
• Dielectric Constant (Dk): 2.2-3.6 @ 10GHz
• Loss Tangent (Df): 0.0010-0.0027 @ 10GHz
• Operating Frequency: DC to 110GHz
• Thermal Conductivity: 0.4-1.8 W/m·K
• Temperature Stability: ±0.002 Dk variation
• CTE (Z-axis): 60-180 ppm/°C
• Tg: 280-320°C (for PTFE-based)
Suppliers: Rogers Corporation (US), Taconic Advanced Dielectrics (US), Arlon Electronic Materials (US), Panasonic (Japan), Nelco (Singapore)
Applications: High-frequency probe cards, RF/microwave testing, 5G/6G semiconductor testing
Types & Models:
• Pure PTFE: Dupont Teflon PTFE (Dk 2.05), Daikin Neoflon (Dk 2.03)
• Ceramic-Filled PTFE: Rogers RT/duroid 5880 (60% SiO2), RT/duroid 6006 (60% TiO2), Taconic TLY-5 (50% SiO2)
• Glass Microsphere Filled: Rogers RT/duroid 5870 (30% glass), Arlon AD1000 (Dk 3.0)
Key Parameters:
• Dielectric Constant (Dk): 2.0-3.0 @ 10GHz
• Loss Tangent (Df): <0.0009 @ 10GHz
• Operating Temp: -200°C to +260°C
• Chemical Resistance: Excellent (acid/alkali proof)
• Moisture Absorption: <0.01%
• Tensile Strength: 20-35 MPa
• Flexural Modulus: 400-1200 MPa
Suppliers: Dupont (US), Daikin (Japan), Rogers (US), Taconic (US), 3M (US)
Applications: Ultra-high frequency probe cards, millimeter-wave testing, harsh environment applications
Types & Models:
• Aluminum Base: Bergquist AL600 (1.5 W/m·K), Panasonic R-A700 (2.0 W/m·K), Shengyi MTA (1.8 W/m·K)
• Copper Base: Furukawa CPCB (8.0 W/m·K), Nitto Denko (5.0 W/m·K)
• Iron Base: Mitsubishi MCPCB (1.0 W/m·K)
• Hybrid Metal Core: Rogers CoolSpan (3.0-5.0 W/m·K)
Key Parameters:
• Thermal Conductivity: 1.5-8.0 W/m·K
• Insulation Resistance: >10¹³ Ω
• Voltage Withstand: >20kV/mm
• Operating Temp: -40°C to +150°C
• Mechanical Strength: 150-300 MPa
• Dielectric Strength: 20-40 kV/mm
• Thermal Resistance: >1000 cycles (-40°C to +125°C)
Suppliers: Bergquist (US), Panasonic (Japan), Furukawa (Japan), Nitto Denko (Japan), Shengyi (China)
Applications: High-power probe cards, automotive semiconductor testing, thermal management solutions
Types & Models:
• Polyimide (PI): Dupont Kapton HN (Dk 3.5), Ube Upilex S (Dk 3.4), Kolon PI (Dk 3.3)
• PET: Toray Lumirror (Dk 3.2), Mitsubishi PET (Dk 3.1)
• LCP (Liquid Crystal Polymer): Kuraray Vecstar (Dk 3.0), Sumitomo LCP (Dk 2.9), Dupont Zenite (Dk 3.1)
• Adhesives: 3M 9295LE, Nitto 5601, Tesa 7475
Key Parameters:
• Flex Life: >100,000 bending cycles
• Dielectric Constant (Dk): 3.0-3.5 @ 1GHz
• Operating Temp: -200°C to +260°C (PI)
• Tensile Strength: 150-250 MPa
• Thickness: 0.025-0.25mm
• Tear Resistance: 50-100 N/mm
• Adhesion Strength: >1.0 N/mm
Suppliers: Dupont (US), Toray (Japan), Kuraray (Japan), Sumitomo (Japan), 3M (US), Nitto Denko (Japan)
Applications: Flexible probe card interfaces, miniaturized probe cards, high-density interconnects
Copper Cladding Specifications:
• Thickness: 0.5oz (17μm), 1oz (35μm), 2oz (70μm), 3oz (105μm), 4oz (140μm), 6oz (200μm)
• Copper Type: ED Copper (Electrodeposited), RA Copper (Rolled Annealed)
• Surface Roughness: Ra 0.3-1.5μm (according to IPC-4562)
Surface Finishes & Parameters:
• ENIG: Ni 3-5μm, Au 0.05-0.1μm, Hardness 300-400 HV, Wear Resistance >500 cycles
• HASL: Sn63/Pb37 or SAC305 (Sn96.5/Ag3.0/Cu0.5), Thickness 5-20μm, Melting Point 183-217°C
• OSP: Organic Coating 0.2-0.5μm, Solderability >10 seconds, Storage Life 6 months
• Immersion Silver: Ag 0.1-0.3μm, Contact Resistance <50mΩ, Tarnish Resistance Excellent
• Immersion Tin: Sn 0.8-1.2μm, Solderability Excellent, Shelf Life 12 months
• ENEPIG: Ni 3-5μm, Pd 0.05-0.1μm, Au 0.02-0.05μm (best for wire bonding)
Suppliers: MacDermid (US), Atotech (Germany), Rohm & Haas (US), Technic (US), Enthone (US)
Applications: Enhanced contact reliability, corrosion resistance, solderability for probe card assembly
| Material Type | Dk (@1GHz) | Df (@1GHz) | Tg (°C) | Cost Level | Best For |
|---|---|---|---|---|---|
| Standard FR4 | 4.5 | 0.020 | 130 | Low | Low-frequency testing |
| High Tg FR4 | 4.2 | 0.018 | 170-180 | Medium | General purpose testing |
| Rogers 4350B | 3.48 | 0.0037 | 280 | High | Mid-frequency RF testing |
| Rogers 5880 | 2.2 | 0.0009 | 300 | Very High | 67GHz+ testing |
| PTFE | 2.05 | 0.0008 | 320 | Premium | Millimeter-wave testing |
Our probe card manufacturing process is optimized for high precision and semiconductor industry compliance, tailored specifically for wafer testing, packaging testing and advanced semiconductor applications:
Custom probe card design; signal integrity simulation; mechanical stress analysis; semiconductor test requirement validation
Precision material procurement; material certification; thermal/mechanical property verification; traceability documentation
CNC machining (±1μm precision); laser drilling; EDM processing; probe tip forming and sharpening
High-precision assembly; optical alignment; electrical calibration; contact resistance testing
Functional testing; environmental testing (-40℃~+125℃); durability testing; signal integrity verification
ESD-safe packaging; calibration documentation; on-site installation support; 24/7 technical assistance
Our manufacturing facility is equipped with specialized production lines to handle high-precision, high-reliability probe cards, with strict adherence to semiconductor industry quality standards:
| Technical Parameter | Capability | Semiconductor Applications |
|---|---|---|
| Probe Pitch | 0.01mm to 2.54mm (400μm to 100mil) | 2nm advanced process, memory chips, power devices |
| Positioning Accuracy | ±1μm (optical alignment) | High-density wafer testing, fine pitch packaging |
| Probe Tip Precision | 2μm tip radius, 5° tip angle | Advanced node semiconductor testing, micro-contact applications |
| Signal Frequency | DC to 67GHz (high-frequency probe cards) | 5G/6G chips, RF semiconductors, high-speed interfaces |
| Current Handling | Up to 50A (power probe cards) | Power semiconductors, automotive electronics, power management ICs |
| Operating Temperature | -40℃ to +125℃ (extended range available) | Automotive semiconductor testing, extreme environment applications |
| Durability | 100,000+ insertions (standard), 1M+ for special designs | High-volume production testing, reliability testing |
| Delivery Time | 7-14 days standard, 48h expedited design review | Urgent semiconductor test projects, rapid prototyping |
ISO 9001:2015 (Quality Management System)
IATF 16949:2016 (Automotive Quality)
ISO 14001:2015 (Environmental Management)
ISO 45001:2018 (Occupational Health & Safety)
RoHS 2.0/REACH Compliance (EU Directives)
ESD S20.20 Certification (ANSI/ESD)
AEC-Q100 Automotive Qualification (Grade 0-4)
UL 94 V-0 Flammability Rating for PCB Materials
Semiconductor Test Council (STC) compliant
JEDEC Standard Compliance (JESD22, JESD47)
IPC Standards (IPC-6012, IPC-4101, IPC-A-600)
Custom calibration to customer specifications
Challenge: 7nm logic chip wafer testing with 5μm pitch, 67GHz high-frequency signal requirements
Solution: Palladium alloy probe tips (Umicore PdCu 90/10), Rogers RO5880 substrate (Dk 2.2), optical alignment ±0.5μm
Materials Used: Rogers RO5880 PCB, Umicore PdCu 90/10 probe tips, Kyocera AlN ceramic
Result: 10-day delivery, 99.9% test accuracy, 100,000+ insertion durability, signal loss <0.1dB @ 67GHz
Challenge: IGBT module testing with 50A current, -40°C~+125°C high-temperature requirements
Solution: Tungsten alloy probes (Plansee WCu 80/20), CoorsTek AlN substrate (200 W/m·K), thermal management design
Materials Used: Isola FR408HR PCB (Tg 170°C), Plansee WCu 80/20 probe tips, CoorsTek AlN ceramic
Result: AEC-Q100 Grade 0 compliant, -40℃~+125℃ operating range, 99.8% test yield, 50A current handling
Challenge: DDR5 memory chip testing with 1.2V low voltage, 4800MT/s high-speed signals, 0.01mm pitch
Solution: Low-resistance palladium probes (Tanaka PdAg 80/20), Rogers RO4350B impedance-matched design (±3Ω)
Materials Used: Rogers RO4350B PCB, Tanaka PdAg 80/20 probe tips, Shengyi S1000-2 backup material
Result: 4800MT/s data rate support, 0.01mm pitch capability, 99.7% test accuracy, contact resistance <30mΩ
High-precision probe cards for 2nm-90nm logic chip wafer testing with fine pitch capabilities (0.01mm) and high-frequency performance up to 67GHz for advanced CPU/GPU/SoC testing applications. Materials: Rogers RO5880, Umicore palladium alloys.
Specialized probe cards for DDR4/DDR5 memory chips, SSD controllers, and NAND flash testing with low contact resistance (<30mΩ) and high-speed signal integrity (4800MT/s+). Materials: Rogers RO4350B, Tanaka PdAg alloys.
AEC-Q100 compliant probe cards for automotive power devices (IGBT/MOSFET), sensors, and infotainment systems with extended temperature range (-40℃~+125℃) and high-current handling (up to 50A). Materials: Isola FR408HR, Plansee tungsten alloys.
High-frequency probe cards for 5G/6G semiconductor testing, radar modules, and communication chips with ultra-low loss (<0.1dB @ 67GHz) and precise impedance control (±3Ω). Materials: Taconic TLY-5, Rogers RO5880.
High-power probe cards for power semiconductors, voltage regulators, and energy storage devices with excellent thermal management and high-current capabilities (up to 50A). Materials: CoorsTek AlN, Plansee WCu alloys.
Low-power, high-density probe cards for IoT chips, MEMS sensors, and wearable device semiconductors with miniaturized design and flexible interfaces. Materials: Dupont Kapton, Nitinol alloys.
Contact our Probe Card engineering team to discuss your wafer test & packaging requirements and receive a free design review and quote within 24 hours. We offer tailored probe card fabrication and assembly solutions for high-precision semiconductor testing applications.
